研究成果 - 郭炜

论文列表:

  1. Recent advances and prospects for GaN-based hybrid type ultraviolet photodetector, J Zhang, L Deng, S Xia, C Guo, K Liu, L Chen, W Liu, H Xiao, Z Yang, W Guo*, J Ye*, Semiconductor Science and Technology, 39, 073001 (2024)
  2. Effects of high-temperature thermal annealing on the crystal structure and phase separation in sputtered ScAlN thin films, L Deng, F Meng, J Li, F Ye, W Guo*, J Ye*, Journal of Alloys and Compounds, 997, 174997 (2024)
  3. Comparative Study on Schottky Contact Behaviors between Ga-and N-Polar GaN with SiNx Interlayer, Z Yu, Y Dai, K Tang, T Luo, S Qi, S Singh, L Huang, J Ye, B Sarkar,* and W Guo*, Electronics 13, 1679 (2024)
  4. Control of Surface Chemistry in Recess Etching Towards Normally-OFF GaN MIS-HEMTs,  T Luo, Z Yu, Y Dai, S Chen, F Ye, W Xu, J Ye, W Guo*, physica status solidi (RRL)-Rapid Research Letters, 2400091 (2024)
  5. Evolution of Dislocations and Strains in AlN Grown by High-Temperature Metal–Organic Chemical Vapor Deposition, Q Chen, J Gao, C Chen, F Ye, G Gao, C Xu, L Chen, J Ye,* and W Guo*, Crystal Growth & Design, 24, 1784 (2024)
  6. Lateral polarity controlled quasi-vertical GaN Schottky barrier diode with sidewalls absence of plasma damages, Y Dai, Z Zhao, T Luo, Z Yu, W Guo*, J Ye*, Applied Physics Letters, 123, 252110 (2023)
  7. 193 nm laser annealing on p-GaN with enhanced hole concentration and wall-plug-efficiency in deep ultraviolet LED, C Xu, K Liu, Z Yu, Z Zhao, C Chen, J Gao; Z Yang, J Ye*, W Guo*, Applied Physics Letters, 123, 182103 (2023)
  8. Self-powered MSM solar-blind AlGaN photodetector realized by in-plane polarization modulation, C Guo, J Zhang, S Xia, L Deng, K Liu, Z Yang, B Cheng, B Sarkar, W Guo*, and J Ye, Optics Letters 48,4769 (2023)
  9. Temperature-Dependent Optical Behaviors and Demonstration of Carrier Localization in Polar and Semipolar AlGaN Multiple Quantum Wells, P Ouyang, K Liu, J Zhang, Q Chen, L Deng, L Yan, J Hoo, S Guo, L Chen, W Guo*, and J Ye*, Crystals 13, 1076 (2023)
  10. A distinctive architecture design of lateral pn type GaN ultraviolet photodetectors via a numerical simulation, S Xia, B Li, Z Yang*, W Guo*, and J Ye*, Journal of Physics D: Applied Physics 56, 345105 (2023)
  11. The incorporation of AlScN ferroelectric gate dielectric in AlGaN/GaN-HEMT with polarization modulated threshold voltage, Z Zhao, Y Dai, F Meng, L Chen, K Liu, T Luo, Z Yu, Q Wang, Z Yang, J Zhang, W Guo*, L Wu*, and J Ye*, Applied Physics Express 16, 031002 (2023)
  12. Design and Optimization of Self-Isolation GaN HEMT with Lateral-Polarity-Structure, Y Dai, Z Zhao, T Luo, Z Yu, L Chen, W Guo*, and J Ye, Phys. Status Solidi RRL, 17, 2200436 (2023)
  13. Annihilation of Nanoscale Inversion Domains in Nitrogen-Polar AlN under High-Temperature Annealing, W Guo, L Chen, H Xu, Q Chen, K Liu, T Luo, J Jiang, H Wu, G Chen, H Lu, J Ye*, Crystal Growth and Design, 23, 229 (2022)
  14. Implementation of electron restriction layer in n-AlGaN toward balanced carrier distribution in deep ultraviolet light-emitting-diodes, K Liu, L Chen, T Luo, Z Zhao, P Ouyang, J Zhang, Q Chen, B Zhou, S Qi, H Xu, Z Yang, W Guo*, and J Ye*, Applied Physics Letters 121, 241105 (2022)
  15. Polarization modulation of 2DEG toward plasma-damage-free GaN HEMT isolation, Y Dai, W Guo*, L Chen, H Xu, F AlQatari,C Guo, X Peng, K Tang, C Liao, X Li*, and J Ye*, Applied Physics Letters, 121, 012104 (2022)
  16. Conductive SiO2/HfO2 distributed Bragg reflector achieved by electrical breakdown and its application in GaN-based light emitters, M Cui#, C Guo#, Z Yang, L Chen, Y Dai, H Xu, W Guo*, and J Ye*, Journal of Applied Physics, 131, 045301 (2022)
  17. Structural and optical properties of AlN sputtering deposited on sapphire substrates with various orientations, X Peng#, J Sun#, H Liu, L Li, Q K Wang, L Wu, W Guo*, F P Meng*, L Chen, F Huang, and J C Ye*, Journal of Semiconductors, 43, 022801 (2022)
  18. Significantly boosted external quantum efficiency of AlGaN-based DUV-LED utilizing thermal annealed Ni/Al reflective electrodes, X Peng, W Guo*, H Xu, L Chen, Z Yang, L Xu, J Liu, K Tang, C Guo, L Yan, S Guo, C Chen and J Ye*, Applied Physics Express. 14, 072005 (2021)
  19. Self-powered ultraviolet MSM photodetectors with high responsivity enabled by a lateral n+/n- homojunction from opposite polarity domains, C Guo, W Guo,* Y Dai, H Xu, L Chen, D Wang, X Peng, K Tang, H Sun, J Ye, Optics Letters, 46, 3203 (2021) 
  20. Efficient Carrier Recombination in InGaN Pyramidal µ-LEDs Obtained through Selective Area Growth，J Jiang, H Xu, L Chen, L Yan, J Hoo, S Guo, Y Zeng, W Guo*, and J Ye, Photonics, 8, 157 (2021).
  21. Annihilation and Regeneration of Defects in (1122) Semipolar AlN via High-Temperature Annealing and MOVPE Regrowth. L Chen, W Lin, H Chen, H Xu, C Guo, Z Liu, J Yan, J Sun, H Liu, J Wu, W Guo,* J Kang,* and J Ye*, Crystal Growth & Design, 21, 2911 (2021)
  22. Direct demonstration of carrier distribution and recombination within step-bunched UV LED, H Xu, J Jiang, L Chen, J Hoo, L Yan, S Guo, C Shen, Y Wei, H Shao, Z Zhang, W Guo*, J Ye*, Photonics Research, 9, 764 (2021)
  23. Evidence of Carrier Localization in AlGaN/GaN based Ultraviolet Multiple Quantum Wells with Opposite Polarity Domains Provided by Nanoscale Imaging, M Cui, W Guo*, H Xu, J Jiang, L Chen, S Mitra, I Roqan, H Jiang, X Li, and J Ye*, Phys. Status Solidi RRL 2100035 (2021)
  24. Carrier localization and defect-insensitive optical behaviors of ultraviolet multiple quantum wells grown on patterned AlN nucleation layer, L Chen, Y Dai, L Li, J Jiang, H Xu, K Li, T Ng, M Cui, W Guo*, H Sun*, and J Ye*, Journal of Alloys and Compounds, 861, 157589 (2021) 
  25. Polarity control and fabrication of lateral-polarity-structure of III-nitride thin films and devices: progress and prospect, W Guo, H Xu, L Chen, H Yu, J Jiang, M Sheikhi, L Li, Y Dai, M Cui, H Sun, and J Ye, Journal of Physics D: Applied Physics, 53, 483002 (2020)
  26. Improved carrier confinement and stimulated recombination rate in GaN-based vertical-cavity surface-emitting lasers with buried p-AlGaN inversion layer. M Cui, Y Gao, S Hang, X Qiu, Y Zhang, Z Zhang*, W Guo*, J Ye*, Superlattices and Microstructures, 146, 106654 (2020)
  27. Polarity Control and Nanoscale Optical Characterization of AlGaN-Based Multiple-Quantum-Wells for Ultraviolet C Emitters, H Xu, J Jiang, Y Dai, M Cui, K Li, X Ge, J Hoo, L Yan, S Guo, J Ning, H Sun, B Sarkar, W Guo*, and J Ye* ACS Applied Nano Materials 3, 5335 (2020) 
  28. Revealing the surface electronic structures of AlGaN deep-ultraviolet multiple quantum wells with lateral polarity domains, W Guo, L Chen, H Xu, Y Qian, M Sheikhi, J Hoo, S Guo, L Xu, J Liu, F Alqatari, X Li, K He, Z Feng, and J Ye*, Photonics Research, 8, 812 (2020)
  29. Demonstration of ohmic contact using MoOx/Al on p-GaN and the proposal of a reflective electrode for AlGaN-based DUV-LEDs, L Li#, M Cui#, H Shao, Y Dai, L Chen, Z Zhang, J Hoo,  S Guo, W Lan, L Cao, H Xu, W Guo*, J Ye, Optics Letters, 45, 2427 (2020)
  30. Mechanism of improved luminescence intensity of Ultraviolet Light Emitting Diodes (UV-LEDs) under thermal and chemical treatments. M Sheikhi, W Guo*, Y Dai, M Cui, J Hoo, S Guo, L Xu, J Liu, J Ye*, IEEE Photonics Journal, 11, 1 (2019)
  31. Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate, H Sun, S Mitra, R Subedi, Y Zhang, W Guo*, J Ye, M Shakfa, T Ng, B Ooi, I Roqan,* Z Zhang, J Dai,* C Chen, and S Long, Advanced Functional Materials, 29, 1905445 (2019)
  32. Three-dimensional band diagram in lateral polarity junction III-nitride heterostructures, W Guo, S Mitra, J Jiang, H Xu, M Sheikhi, H Sun, K Tian, Z Zhang, H Jiang, I Roqan, X Li*, J Ye*, Optica, 6, 1058 (2019)
  33. Strain modulated nanostructure patterned AlGaN-based deep ultraviolet multiple-quantum-wells for polarization control and light extraction efficiency enhancement,  H Xu, H Long, J Jiang, M Sheikhi, L Li, W Guo*, J Dai, C Chen, J Ye*, Nanotechnology, 30, 435202 (2019)
  34. Omnidirectional whispering-gallery-mode lasing in GaN microdisk obtained by selective area growth on sapphire substrate, J Jiang, H Xu, M Sheikhi, L Li, Z Yang, J Hoo, S Guo, Y Zeng, W Guo*, J Ye*, Optics Express, 27, 16195 (2019)
  35. Single peak deep ultraviolet emission and high internal quantum efficiency in AlGaN quantum wells grown on large miscut sapphire substrates, H Xu, J Jiang, M Sheikhi, Z Chen, J Hoo, S Guo, W Guo*, H Sun*, J Ye*, Superlattices and Microstructures129, 20 (2019)
  36. GaN based UV-LEDs with Ni/Au Nanomeshes as Transparent p-type Electrodes, M Sheikhi, H Xu, J Jiang, S Wu, X Yang, Z Yang, M Liao, W Guo,* and J Ye*, Physica Status Solidi A: Applications and Materials Sciences, 216, 1800684 (2018)
  37. Tuning photonic crystal fabrication by nanosphere lithography and surface treatment of AlGaN-based ultraviolet light-emitting diodes, K Chee†, W Guo†, R Wang, Y Wang, Y Chen and J Ye, Materials & Design, 160, 661 (2018) 
  38. Performance enhancement of ultraviolet light emitting diode incorporating Al nanohole arrays, J Jiang, W Guo*, H Xu, Z Yang, S Guo, W Xie, K Chee, Y Zeng and J Ye*, Nanotechnology, 29, 45LT01 (2018)
  39. Lateral-Polarity-Structure of AlGaN Quantum Wells: A Promising Approach for Enhancing the Ultraviolet Luminescence, W Guo, H Sun, B Torre, J Li, M Sheikhi, J Jiang, H Li, S Guo, K Li, R Lin, A Giugni, E Di-Fabrizio, X Li*, J Ye*, Advanced Functional Materials, 28, 1802395 (2018) 
  40. Comparative study on luminescence extraction strategies of LED by large-scale fabrication of nanopillar and nanohole structures, W Guo, J Li, M Sheikhi, J Jiang, Z Yang, H Li, S Guo, J Sheng, J Sun, B Bo, J Ye*, Journal of Physics D: Applied Physics, 51, 24LT01 (2018)
  41. Insertion of NiO electron blocking layer in fabrication of GaN-Organic heterostructures, J Li, W Guo*, J Jiang, P Gao, B Bo, J Ye*, Japanese Journal of Applied Physics, 57, 030303 (2018)
  42. Lateral Polarity Control of III-nitride Thin Film and Application in GaN Schottky Barrier Diode, J Li, W Guo*, M Sheikhi, H Li, B Bo, and J Ye. Journal of Semiconductors, 39, 053003 (2018)
  43. Enhancing light coupling and emission efficiencies of AlGaN thin film and AlGaN/GaN Multiple Quantum Wells with periodicity-wavelength matched nanostructure array, W Guo, Z Yang, J Li, X Yang, P Gao, F Huang, Y Zhang, J Wang, J Ye*. Nanoscale, 9, 15477 (2017) 
  44. Polarity Control of GaN and Realization of GaN Schottky Barrier Diode Based on Lateral-Polarity-Structure. M Sheikhi, J Li, F Meng, H Li, S Guo, L Liang, H Cao, P Gao, J Ye* and W Guo*, IEEE Transactions on Electron Devices, 64, 4424 (2017)

授权专利：

  1. 紫外辅助MOCVD生长超宽禁带半导体材料的方法及系统，ZL 202011514514.0，郭炜、叶继春
  2. 一种自驱动MSM紫外探测器及其制备方法，ZL202011324348.8，郭炜、国琛雨、陈荔、叶继春
  3. 紫外发光二级管、紫外LED外延层结构及其制备方法，ZL202110154073.6，郭炜、叶继春、徐厚强
  4. HEMT器件及其自隔离方法、制作方法，ZL202110665142.X，郭炜、叶继春、戴贻钧、徐厚强
  5. 紫外LED高反电极、紫外LED及其制备方法，ZL201910963547.4，郭炜、叶继春、李亮、陈荔、戴贻钧、崔梅
  6. 具有导电DBR 结构的GaN 基垂直腔面发射激光器及其制作方法，ZL202011078799.8，崔梅、郭炜、叶继春、张耀华、柯强
  7. 空腔型体声波谐振器及其制作方法，ZL202310394291.6，邓立琼、郭炜、叶继春
  8. 一种新型氮化物垂直结构激光器及其制备方法，ZL202010787389.4，蒋洁安、徐厚强、郭炜、叶继春
  9. 紫外LED高反电极及其制备方法与应用，ZL 202110301894.8，徐厚强、蒋洁安、郭炜，叶继春
  10. 一种III族氮化物半导体发光器件台面刻蚀方法，ZL201811541251.5，徐厚强、蒋洁安、郭炜
  11. AlGaN 基紫外LED 器件及其制备方法与应用，ZL201810432320.2，莫海波、郭炜、蒋洁安、高平奇、叶继春

 

 

最后修改：2024-10-10 21:31:53,   访问次数：4611